IRFP140NPBFN-Channel 100 V 33A (Tc) 140W (Tc) Through Hole TO-247AC
1:$1.7690
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFP14-992376
ManufacturerInfineon Technologies
MPN #.IRFP140NPBF
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet
IRFP140N(PDF)
IRFP140N(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.7690
Ext. Price$ 1.7690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7690$1.7690
25$1.4250$35.6200
100$1.1710$117.0880
500$0.9920$496.1880
1000$0.8420$841.5000
2000$0.7990$1598.0000
5000$0.7690$3846.2500
10000$0.7440$7437.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFP140
Continuous Drain Current (ID) @ 25°C33A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)94 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1400 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance52mOhm @ 16A, 10V
Package Type (Mfr.)TO-247AC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-247-3
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Datasheets
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Environmental Information
Other Related Documents
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFP140NPBF is a power MOSFET manufactured by Infineon Technologies, featuring a robust N-channel design. It is capable of handling a drain-source voltage of 100 V and a continuous drain current of 33 A at the case temperature (Tc). The device is encapsulated in a TO-247AC through-hole package, offering efficient thermal management with a maximum power dissipation of 140 W. Notable electrical characteristics include a total gate charge of 94 nC at 10 V and an input capacitance of 1400 pF at 25 V. This MOSFET utilizes metal-oxide semiconductor technology to deliver reliable performance in high-power switching applications.
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