IRFL024NN-Channel 55 V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223
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ABRmicro #.ABR2045-IRFL02-1014640
ManufacturerInfineon Technologies
MPN #.IRFL024N
Estimated Lead Time-
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Datasheet
IRFL024N(PDF)
IRFL024N(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C2.8A (Ta)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance75mOhm @ 2.8A, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-261-4, TO-261AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFL024N is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient switching and amplification tasks. It operates with a maximum voltage rating of 55 volts and can handle a continuous current of up to 2.8 amperes when mounted on a surface, delivering a power dissipation of 1 watt. This MOSFET is encapsulated in a compact SOT-223 surface-mount package, suitable for space-constrained designs. It features a low on-state resistance of 75 milliohms at 2.8 amperes and 10 volts, enhancing its efficiency in conducting current with minimal losses.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.