IRFIZ24EPBFN-Channel 60 V 14A (Tc) 29W (Tc) Through Hole TO-220AB Full-Pak
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ABRmicro #.ABR2045-IRFIZ2-967038
ManufacturerInfineon Technologies
MPN #.IRFIZ24EPBF
Estimated Lead Time-
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Datasheet
IRFIZ24EPbF(PDF)
IRFIZ24EPbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C14A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)370 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation29W (Tc)
RDS(on) Drain-to-Source On Resistance71mOhm @ 7.8A, 10V
Package Type (Mfr.)TO-220AB Full-Pak
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFIZ24EPBF is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum voltage of 60V and a continuous current of up to 14A under specific conditions (Tc). The component is housed in a TO-220AB Full-Pak package, making it suitable for through-hole mounting. It can dissipate up to 29W of power when mounted with proper heatsinking (Tc). The MOSFET features input capacitance of 370 pF at 25V and a gate-to-source threshold voltage of 4V allowing for a reverse voltage of ±20V, ensuring robust performance in various applications.
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