IRFI9Z24NP-Channel 55 V 9.5A (Tc) 29W (Tc) Through Hole TO-220AB Full-Pak
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ABRmicro #.ABR2045-IRFI9Z-960616
ManufacturerInfineon Technologies
MPN #.IRFI9Z24N
Estimated Lead Time-
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Datasheet
IRFI9Z24N(PDF)
IRFI9Z24N(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C9.5A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Maximum Power Dissipation29W (Tc)
RDS(on) Drain-to-Source On Resistance175mOhm @ 5.4A, 10V
Package Type (Mfr.)TO-220AB Full-Pak
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFI9Z24N is a P-channel MOSFET manufactured by Infineon Technologies, featuring a maximum voltage rating of 55V and a current capacity of 9.5A when case temperature is considered. It offers a power dissipation capability of 29W under similar conditions. Housed in a TO-220AB Full-Pak package, this component is designed for through-hole mounting. Key specifications include a gate charge of 19 nC at 10V and an on-resistance of 175 mOhm at 5.4A with a gate-source voltage of 10V, making it suitable for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.