IRFI9530NP-Channel 100 V 7.7A (Ta) Through Hole TO-220AB Full-Pak
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ABRmicro #.ABR2045-IRFI95-1038461
ManufacturerInfineon Technologies
MPN #.IRFI9530N
Estimated Lead Time-
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Packaging
Tube
Shipping DateNovember 17, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C7.7A (Ta)
Drain-to-Source Voltage (VDS)100 V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)860 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance300mOhm @ 4.6A, 10V
Package Type (Mfr.)TO-220AB Full-Pak
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFI9530N is a P-Channel MOSFET manufactured by Infineon Technologies, designed for use in a variety of electronic systems. It features a 100 V drain-source voltage and supports a continuous current of 7.7 A (when mounted on a standard heatsink in free air at an ambient temperature of 25°C). Encased in a TO-220AB Full-Pak package for through-hole mounting, this MOSFET offers a total gate charge of 38 nC at 10 V and has a typical input capacitance of 860 pF at 25 V. The design and specifications of this component make it suitable for high-reliability applications requiring efficient power handling in compact form factors.
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