IRFI4321PBFN-Channel 150 V 34A (Tc) 46W (Tc) Through Hole TO-220AB Full-Pak
1:$1.9320
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ABRmicro #.ABR2045-IRFI43-977227
ManufacturerInfineon Technologies
MPN #.IRFI4321PBF
Estimated Lead Time12 Weeks
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Datasheet
IRFI4321PbF(PDF)
IRFI4321PbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.9320
Ext. Price$ 1.9320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9320$1.9320
50$1.5330$76.6590
100$1.3140$131.4310
500$1.2860$642.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFI4321
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4440 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation46W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 20A, 10V
Package Type (Mfr.)TO-220AB Full-Pak
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental Information
Other Related Documents
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFI4321PBF is an N-Channel MOSFET produced by Infineon Technologies. It is designed to handle up to 150 volts and a continuous current of 34 amperes when mounted on a suitable heat sink, with a maximum power dissipation of 46 watts. The device features a gate charge of 110 nanocoulombs at a gate-source voltage of 10 volts, and can withstand gate-source voltages up to ±30 volts. It operates in a through-hole TO-220AB Full-Pak package, making it suitable for a variety of mounting configurations. The MOSFET has a gate threshold voltage characterized at 5 volts with a drain current of 250 microamperes, providing reliable switching capabilities.
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