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IRFI1310NN-Channel 100 V 24A (Tc) 56W (Tc) Through Hole PG-TO220-FP
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ABRmicro #.ABR2045-IRFI13-972025
ManufacturerInfineon Technologies
MPN #.IRFI1310N
Estimated Lead Time-
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DatasheetIRFI1310N(PDF)
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In Stock: 15
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Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation56W (Tc)
RDS(on) Drain-to-Source On Resistance36mOhm @ 13A, 10V
Package Type (Mfr.)PG-TO220-FP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFI1310N is an N-Channel MOSFET manufactured by Infineon Technologies, designed to handle a maximum voltage of 100 V and a current capacity of 24A when mounted on the case. It comes in a PG-TO220-FP package, suitable for through-hole mounting. The device can dissipate up to 56W of power in appropriate thermal conditions. It has a gate-source voltage rating of ±20V and a typical input capacitance of 1900 pF at 25 V, indicating its capacity to efficiently switch and amplify electronic signals in various circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.