IRFHS8342TRPBFN-Channel 30 V 8.8A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2) (DFN2020)
1:$0.4270
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ABRmicro #.ABR2045-IRFHS8-940168
ManufacturerInfineon Technologies
MPN #.IRFHS8342TRPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFHS8342PBF(PDF)
IRFHS8342PBF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.4270
Ext. Price$ 0.4270
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4270$0.4270
10$0.3620$3.6230
100$0.2520$25.1810
500$0.1970$98.2810
1000$0.1590$159.3750
2000$0.1430$286.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFHS8342
Continuous Drain Current (ID) @ 25°C8.8A (Ta), 19A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)600 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.1W (Ta)
RDS(on) Drain-to-Source On Resistance16mOhm @ 8.5A, 10V
Package Type (Mfr.)6-PQFN (2x2) (DFN2020)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 25µA
Package / Case6-PowerVDFN
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Datasheets
Environmental Information
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFHS8342TRPBF, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for efficient surface mount applications, housed in a compact 6-PQFN (2x2) package. It operates at a voltage of 30 V and offers current capacities of up to 8.8A when measured in ambient conditions (Ta) and up to 19A with proper heat sinking (Tc). This component features a low on-state resistance of 16 milliohms at 8.5A and 10V, ensuring efficient current handling with minimal power loss. It demonstrates a gate charge of 8.7 nanoCoulombs at a gate-source voltage of 10 V and has a threshold voltage of 2.35V at a gate current of 25µA, making it suitable for high-efficiency power switching applications within its specified operating conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.