IRFHS8342TR2PBFN-Channel 30 V 8.8A (Ta), 19A (Tc) Surface Mount PG-TSDSON-6
N/A
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ABRmicro #.ABR2045-IRFHS8-1007925
ManufacturerInfineon Technologies
MPN #.IRFHS8342TR2PBF
Estimated Lead Time-
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Datasheet
IRFHS8342PBF(PDF)
IRFHS8342PBF(PDF)
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Packaging
Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Series-
Packaging
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C8.8A (Ta), 19A (Tc)
Drain-to-Source Voltage (VDS)30 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)600 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance16mOhm @ 8.5A, 10V
Package Type (Mfr.)PG-TSDSON-6
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 25µA
Package / Case6-PowerVDFN
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Datasheets
Simulation Models
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFHS8342TR2PBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the compact PG-TSDSON-6 package. It is capable of handling a continuous current of 8.8A when mounted on a standard board (Ta) and up to 19A with proper thermal control (Tc). The MOSFET features a gate charge of 8.7 nC at a gate-source voltage of 10 volts and a total input capacitance of 600 pF at 25 volts. This component is engineered to offer reliable performance in managing switching tasks with its efficient layout and electrical specifications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.