IRFHM830DTR2PBFN-Channel 30 V 20A (Ta), 40A (Tc) Surface Mount PQFN (3x3)
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ABRmicro #.ABR2045-IRFHM8-960444
ManufacturerInfineon Technologies
MPN #.IRFHM830DTR2PBF
Estimated Lead Time-
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Datasheet
IRFHM830DPbF(PDF)
IRFHM830DPbF(PDF)
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Packaging
Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Series-
Packaging
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C20A (Ta), 40A (Tc)
Drain-to-Source Voltage (VDS)30 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1797 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance4.3mOhm @ 20A, 10V
Package Type (Mfr.)PQFN (3x3)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 50µA
Package / Case8-VQFN Exposed Pad
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFHM830DTR2PBF is a N-Channel MOSFET manufactured by Infineon Technologies, featuring a voltage rating of 30V and a current handling capability of 20A when in a discreet ambient temperature setup (Ta), with an increased capability of 40A when mounted on a thermal conductive case (Tc). It is designed for surface mounting and comes in a compact PQFN package measuring 3x3mm. The device offers a low on-resistance of 4.3mOhm at 20A and 10V, making it efficient for switching applications. The gate charge is measured at 27 nC at 10V, and it requires a threshold voltage of 2.35V to conduct at a minimal 50µA current, which reflects its efficient operational characteristics within its specified limits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.