IRFHM7194TRPBFN-Channel 100 V 9.3A (Ta), 34A (Tc) 2.8W (Ta), 37W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
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ABRmicro #.ABR2045-IRFHM7-988886
ManufacturerInfineon Technologies
MPN #.IRFHM7194TRPBF
Estimated Lead Time-
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Datasheet
IRFHM7194TRPbF(PDF)
IRFHM7194TRPbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesFASTIRFET™, HEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C9.3A (Ta), 34A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)733 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 37W (Tc)
RDS(on) Drain-to-Source On Resistance16.4mOhm @ 20A, 10V
Package Type (Mfr.)8-PQFN (3.3x3.3), Power33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.6V @ 50µA
Package / Case8-PowerTDFN
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Datasheets
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFHM7194TRPBF is a surface-mount N-Channel MOSFET designed by Infineon Technologies. It operates with a maximum drain-source voltage of 100 V and current ratings of 9.3A under ambient conditions and up to 34A with a suitable heatsink. The device offers power dissipation capabilities of 2.8W in free air and 37W with proper thermal management. Encased in an 8-PQFN package measuring 3.3x3.3 mm, this MOSFET can handle gate-source voltages up to ±20V, making it suitable for a range of electronic circuit designs.
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