IRFH8303TRPBFN-Channel 30 V 43A (Ta), 100A (Tc) 3.7W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
1:$1.5900
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFH83-926262
ManufacturerInfineon Technologies
MPN #.IRFH8303TRPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFH8303TRPbF(PDF)
IRFH8303TRPbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.5900
Ext. Price$ 1.5900
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5900$1.5900
10$1.3220$13.2180
100$1.0520$105.1880
500$0.8900$445.1880
1000$0.7540$754.3750
2000$0.7170$1434.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®, StrongIRFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFH8303
Continuous Drain Current (ID) @ 25°C43A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)179 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7736 pF @ 24 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.7W (Ta), 156W (Tc)
RDS(on) Drain-to-Source On Resistance1.1mOhm @ 50A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 150µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH8303TRPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient electrical conduction with a maximum voltage rating of 30V. This surface-mount device is capable of handling continuous currents of up to 43A in free air and 100A with proper heat sinking, with a power dissipation of 3.7W and 156W respectively under the same conditions. Encased in an 8-PQFN package measuring 5x6 mm, it features a gate-source voltage threshold of ±20V and offers a low on-resistance facilitated by its high input capacitance of 7736 pF at 24V. This MOSFET is tailored for applications requiring high efficiency and compact board space.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.