IRFH7187TRPBFN-Channel 100 V 18A (Ta), 105A (Tc) 3.8W (Ta), 132W (Tc) Surface Mount 8-PQFN (5x6)
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ABRmicro #.ABR2045-IRFH71-984468
ManufacturerInfineon Technologies
MPN #.IRFH7187TRPBF
Estimated Lead Time-
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Datasheet
IRFH7187PbF(PDF)
IRFH7187PbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesFASTIRFET™, HEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C18A (Ta), 105A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2116 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.8W (Ta), 132W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 50A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.6V @ 150µA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH7187TRPBF is a surface-mounted N-Channel MOSFET manufactured by Infineon Technologies. It features a maximum voltage rating of 100V and can handle a continuous current of up to 18A when measured at ambient temperature (Ta) and up to 105A when measured at case temperature (Tc). The device is capable of dissipating up to 3.8W at ambient temperature and 132W at the case temperature. Housed in an 8-PQFN (5x6mm) package, this MOSFET boasts a low on-state resistance of 6mOhm at 50A and 10V, and it has an input capacitance of 2116 pF at 50V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.