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IRFH7084TRPBFN-Channel 40 V 100A (Tc) 156W (Tc) Surface Mount 8-PQFN (5x6)

1:$1.5300

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFH70-982886
MPN #.IRFH7084TRPBF
Estimated Lead Time12 Weeks
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In Stock: 17252
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5300
Ext. Price$ 1.5300
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5300$1.5300
10$1.2750$12.7500
100$1.0150$101.4690
500$0.8590$429.2500
1000$0.7280$727.8130
2000$0.6920$1383.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFH7084
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)190 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6560 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation156W (Tc)
RDS(on) Drain-to-Source On Resistance1.25mOhm @ 100A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 150µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH7084TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management solutions. It supports a maximum continuous current of 100A and has a drain-source voltage rating of 40V. The device delivers a power dissipation capacity of up to 156W under optimal conditions. Encased in an 8-PQFN (5x6) surface-mount package, it features a gate threshold voltage of 3.9V at 150µA. It can handle gate-source voltages of ±20V, with a recommended gate drive voltage of 10V for optimal performance.
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