IRFH5300TRPBFN-Channel 30 V 40A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6)
1:$1.2650
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFH53-1019651
ManufacturerInfineon Technologies
MPN #.IRFH5300TRPBF
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
IRFH5300PbF(PDF)
IRFH5300PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2650
Ext. Price$ 1.2650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2650$1.2650
10$1.0370$10.3700
100$0.8060$80.6440
500$0.6840$342.1250
1000$0.5570$556.7500
2000$0.5240$1047.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFH5300
Continuous Drain Current (ID) @ 25°C40A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7200 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.6W (Ta), 250W (Tc)
RDS(on) Drain-to-Source On Resistance1.4mOhm @ 50A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 150µA
Package / Case8-PowerVDFN
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH5300TRPBF from Infineon Technologies is a surface mount N-Channel MOSFET designed for efficient power management. It operates with a maximum drain-source voltage of 30V and can handle continuous current ratings of up to 40A at ambient temperature (Ta) and 100A when case temperature (Tc) is considered. This component has a power dissipation capability of 3.6W at Ta and 250W at Tc, all contained within a compact 8-PQFN (5x6) package. The MOSFET features a total gate charge of 120 nC at a gate-source voltage of 10V and an input capacitance of 7200 pF at 15V, suitable for various high-performance applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.