IRFH5210TRPBFN-Channel 100 V 10A (Ta), 55A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
1:$1.4110
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ABRmicro #.ABR2045-IRFH52-929227
ManufacturerInfineon Technologies
MPN #.IRFH5210TRPBF
Estimated Lead Time12 Weeks
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Datasheet
IRFH5210PBF(PDF)
IRFH5210PBF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.4110
Ext. Price$ 1.4110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4110$1.4110
10$1.1710$11.7090
100$0.9320$93.1810
500$0.7880$394.1880
1000$0.6680$668.3130
2000$0.6350$1270.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFH5210
Continuous Drain Current (ID) @ 25°C10A (Ta), 55A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)59 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2570 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.6W (Ta), 104W (Tc)
RDS(on) Drain-to-Source On Resistance14.9mOhm @ 33A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / Case8-PowerVDFN
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH5210TRPBF is an N-Channel MOSFET produced by Infineon Technologies, designed for surface mount applications. It features a 100 V drain-source voltage and can conduct up to 10A in free air conditions (Ta) or 55A with proper case mounting (Tc). The component, which is housed in an 8-PQFN package measuring 5x6 mm, offers power dissipation capabilities of 3.6W in free air and 104W with case mounting. With a gate-source voltage tolerance of ±20V, the MOSFET has an input capacitance of 2570 pF at 25 V and a total gate charge of 59 nC at 10 V, facilitating efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.