IRFH5206TRPBFN-Channel 60 V 16A (Ta), 89A (Tc) 3.6W (Ta), 100W (Tc) Surface Mount 8-PQFN (5x6)
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFH52-966265
ManufacturerInfineon Technologies
MPN #.IRFH5206TRPBF
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IRFH5206PBF(PDF)
IRFH5206PBF(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C16A (Ta), 89A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2490 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.6W (Ta), 100W (Tc)
RDS(on) Drain-to-Source On Resistance6.7mOhm @ 50A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / Case8-PowerVDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH5206TRPBF is a surface-mount N-Channel MOSFET from Infineon Technologies, designed to handle moderate to high power levels. It can support a voltage of up to 60 V and a continuous current of 16A in ambient temperature (Ta) or up to 89A when appropriately mounted (Tc). The device exhibits a low on-resistance of 6.7 mOhm at a gate drive of 10V and a drain current of 50A, which ensures efficient power switching with minimal heat generation. Encased in an 8-PQFN package measuring 5x6 mm, the MOSFET is suitable for applications requiring compact and efficient power management solutions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.