IRFH5206TR2PBFN-Channel 60 V 16A (Ta), 89A (Tc) Surface Mount 8-PQFN (5x6)
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ABRmicro #.ABR2045-IRFH52-930335
ManufacturerInfineon Technologies
MPN #.IRFH5206TR2PBF
Estimated Lead Time-
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Datasheet
IRFH5206PBF(PDF)
IRFH5206PBF(PDF)
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Packaging
Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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Series-
Packaging
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C16A (Ta), 89A (Tc)
Drain-to-Source Voltage (VDS)60 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2490 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance6.7mOhm @ 50A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / Case8-PowerVDFN
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH5206TR2PBF is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, designed for operation with a maximum voltage of 60 V and capable of carrying a current of up to 16A in ambient conditions (Ta) and 89A with a suitable thermal condition (Tc) through its compact 8-PQFN (5x6) package. It features a gate charge of 60 nC at 10 V and a gate threshold voltage of 4V at a drain current of 100µA, which makes it suitable for precise switching operations. Additionally, it has an input capacitance of 2490 pF measured at 25 V, reflecting its electrical characteristics within the specified voltage range for efficient management of power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.