IRFH5053TR2PBFN-Channel 100 V 9.3A (Ta), 46A (Tc) Surface Mount PQFN (5x6) Single Die
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ABRmicro #.ABR2045-IRFH50-996739
ManufacturerInfineon Technologies
MPN #.IRFH5053TR2PBF
Estimated Lead Time-
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Datasheet
IRFH5053(PDF)
IRFH5053(PDF)
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Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Series-
Packaging
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C9.3A (Ta), 46A (Tc)
Drain-to-Source Voltage (VDS)100 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1510 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance18mOhm @ 9.3A, 10V
Package Type (Mfr.)PQFN (5x6) Single Die
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.9V @ 100µA
Package / Case8-PowerVDFN
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH5053TR2PBF is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, featuring a compact PQFN (5x6) package. This device is designed to handle a maximum of 100 V and currents up to 9.3A in ambient conditions, with an increased capacity of 46A when mounted on a suitable thermal surface. It exhibits a low on-resistance of 18 milliohms at a current of 9.3A and a gate voltage of 10V, ensuring efficient performance. Additionally, it has a gate threshold voltage of 4.9V at a low gate current of 100µA, alongside a typical input capacitance of 1510 pF at 50 V, making it suitable for various switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.