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IRFH5015TRPBFN-Channel 150 V 10A (Ta), 56A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

1:$1.6250

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFH50-980196
MPN #.IRFH5015TRPBF
Estimated Lead Time12 Weeks
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In Stock: 5398
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.6250
Ext. Price$ 1.6250
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6250$1.6250
10$1.3490$13.4940
100$1.0740$107.4190
500$0.9080$454.2190
1000$0.7700$770.3130
2000$0.7330$1466.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRFH5015
Continuous Drain Current (ID) @ 25°C10A (Ta), 56A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2300 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.6W (Ta), 156W (Tc)
RDS(on) Drain-to-Source On Resistance31mOhm @ 34A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 150µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH5015TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, featuring a maximum voltage rating of 150 V. It is capable of carrying a continuous current of 10A when measured at the ambient temperature (Ta), and up to 56A when mounted on a cooler surface (Tc). The power dissipation is rated at 3.6W for ambient conditions and up to 156W when connected to a heat sink. Encased in a compact 8-PQFN package measuring 5x6 mm, this part is suitable for surface mounting. It exhibits a gate charge of 50 nC at 10 V and has a gate voltage tolerance of ±20 V, making it suitable for various electronic applications that require efficient switching capabilities.
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