IRFH4210TRPBFN-Channel 25 V 45A (Ta) 3.6W (Ta), 104W (Tc) Surface Mount PQFN (5x6)
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ABRmicro #.ABR2045-IRFH42-999867
ManufacturerInfineon Technologies
MPN #.IRFH4210TRPBF
Estimated Lead Time-
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Datasheet
IRFH4210PbF(PDF)
IRFH4210PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C45A (Ta)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)74 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4812 pF @ 13 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.6W (Ta), 104W (Tc)
RDS(on) Drain-to-Source On Resistance1.35mOhm @ 50A, 10V
Package Type (Mfr.)PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 100µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH4210TRPBF is an N-channel MOSFET produced by Infineon Technologies, designed for surface mount applications within a PQFN (5x6) package. It operates with a maximum voltage of 25V and can handle a continuous current of 45A at ambient temperature (Ta) and 104W power dissipation when mounted on a thermally conductive substrate (Tc). The MOSFET features a gate threshold voltage range of ±20V and is compatible with drive voltages of 4.5V and 10V. It exhibits a low gate-source threshold voltage of 2.1V at a gate current of 100µA, making it suitable for efficient switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.