IRFH4209DTRPBFN-Channel 25 V 44A (Ta), 260A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRFH42-929634
ManufacturerInfineon Technologies
MPN #.IRFH4209DTRPBF
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IRFH4209DPbF(PDF)
IRFH4209DPbF(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesFASTIRFET™, HEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C44A (Ta), 260A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)74 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4620 pF @ 13 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.5W (Ta), 125W (Tc)
RDS(on) Drain-to-Source On Resistance1.1mOhm @ 50A, 10V
Package Type (Mfr.)PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 100µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
PCN Packaging
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFH4209DTRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with a PQFN package measuring 5x6 mm. It operates effectively with a voltage rating of 25 volts and can handle continuous currents up to 44A at ambient temperature and 260A with proper cooling conditions. The device exhibits a gate charge of 74 nC at 10 volts, showcasing its efficiency in switching applications. Additionally, it accommodates a power dissipation of 3.5 watts at ambient temperature and up to 125 watts with appropriate thermal management. With a gate-source voltage tolerance of ±20 volts, this MOSFET offers robust performance for various electrical designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.