IRFBA1405PN-Channel 55 V 174A (Tc) 330W (Tc) Through Hole SUPER-220™ (TO-273AA)
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ABRmicro #.ABR2045-IRFBA1-1035663
ManufacturerInfineon Technologies
MPN #.IRFBA1405P
Estimated Lead Time-
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Datasheet
IRFBA1405P(PDF)
IRFBA1405P(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C174A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)260 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5480 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Maximum Power Dissipation330W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 101A, 10V
Package Type (Mfr.)SUPER-220™ (TO-273AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-273AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFBA1405P is an N-channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency power handling. It accommodates a maximum drain-source voltage of 55V and a continuous drain current of 174A at a case temperature (Tc) of 25°C, while dissipating up to 330W of power. Packaged in a SUPER-220™ (TO-273AA) through-hole configuration, this MOSFET offers low on-resistance at 5 milliohms when conducting 101A with a gate-source voltage of 10V. Additionally, it features a significant total gate charge of 260 nC at 10V, indicating the necessary gate drive requirements for efficient switching performance.
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