IRFB7734PBFN-Channel 75 V 183A (Tc) 290W (Tc) Through Hole TO-220AB
1:$1.5470
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ABRmicro #.ABR2045-IRFB77-982240
ManufacturerInfineon Technologies
MPN #.IRFB7734PBF
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
IRF(B,S,SL)7734PbF(PDF)
IRF(B,S,SL)7734PbF(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5470
Ext. Price$ 1.5470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5470$1.5470
50$1.2440$62.2090
100$1.0230$102.3190
500$0.9240$462.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®, StrongIRFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFB7734
Continuous Drain Current (ID) @ 25°C183A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)270 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10150 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation290W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 100A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 250µA
Package / CaseTO-220-3
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PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB7734PBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for high power applications. It operates with a maximum voltage of 75V and can handle a continuous current of up to 183A when properly cooled. The component is housed in a Through Hole TO-220AB package, which allows for efficient heat dissipation, supporting a power dissipation of 290W. It features a total gate charge of 270 nC at 10V, and exhibits a low on-state resistance of 3.5 milliohms when conducting 100A at a gate voltage of 10V. This specification highlights its efficiency in energy conduction and suitability for demanding electrical applications.
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