IRFB7437PBFN-Channel 40 V 195A (Tc) 230W (Tc) Through Hole TO-220AB
1:$0.9320
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ABRmicro #.ABR2045-IRFB74-993225
ManufacturerInfineon Technologies
MPN #.IRFB7437PBF
Estimated Lead Time12 Weeks
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Datasheet
IRFB7437PBF Datasheet(PDF)
IRFB7437PBF Datasheet(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.9320
Ext. Price$ 0.9320
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9320$0.9320
50$0.7510$37.5590
100$0.6180$61.8380
500$0.5580$278.9060
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®, StrongIRFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFB7437
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)225 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7330 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance2mOhm @ 100A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 150µA
Package / CaseTO-220-3
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Datasheets
Environmental Information
Other Related Documents
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB7437PBF is a semiconductor component manufactured by Infineon Technologies, designed as a high-power N-channel MOSFET. Encased in a TO-220AB package, this component supports a maximum drain-source voltage of 40 V and can handle currents up to 195A with a power dissipation of 230W, when properly mounted. It features a gate charge of 225 nC at 10 V gate-source voltage and a threshold voltage of 3.9V at a drain current of 150µA. This MOSFET is intended for through-hole mounting, suitable for applications requiring efficient power management in electronic circuits.
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