IRFB7430PBFN-Channel 40 V 195A (Tc) 375W (Tc) Through Hole TO-220AB
1:$2.6410
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ABRmicro #.ABR2045-IRFB74-941922
ManufacturerInfineon Technologies
MPN #.IRFB7430PBF
Estimated Lead Time12 Weeks
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Datasheet
IRFB7430PBF(PDF)
IRFB7430PBF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.6410
Ext. Price$ 2.6410
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.6410$2.6410
50$2.0920$104.6030
100$1.7940$179.3500
500$1.5940$796.8750
1000$1.3640$1364.2500
2000$1.2850$2569.1250
5000$1.2330$6162.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®, StrongIRFET™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFB7430
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)460 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14240 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance1.3mOhm @ 100A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 250µA
Package / CaseTO-220-3
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PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB7430PBF is a high-power N-channel MOSFET manufactured by Infineon Technologies, designed for efficient electrical switching and amplification in various circuits. This component can handle a drain-source voltage of 40V and a continuous drain current of up to 195A at a case temperature (Tc). Housed in a TO-220AB through-hole package, it is capable of dissipating 375W of power under specified conditions. The MOSFET features a gate-source voltage rating of ±20V and exhibits a gate charge of 460 nC at 10V. It is constructed with metal oxide semiconductor technology, enabling effective performance in high-power applications.
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