IRFB5615PBFN-Channel 150 V 35A (Tc) 144W (Tc) Through Hole TO-220AB
1:$1.5470
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ABRmicro #.ABR2045-IRFB56-1029486
ManufacturerInfineon Technologies
MPN #.IRFB5615PBF
Estimated Lead Time12 Weeks
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Datasheet
IRFB5615PbF(PDF)
IRFB5615PbF(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.5470
Ext. Price$ 1.5470
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.5470$1.5470
10$1.2880$12.8780
100$1.0240$102.4250
500$0.8670$433.5000
1000$0.7350$735.2500
2000$0.6990$1398.2500
5000$0.6730$3362.8130
10000$0.6500$6502.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIRFB5615
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1750 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation144W (Tc)
RDS(on) Drain-to-Source On Resistance39mOhm @ 21A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-220-3
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PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB5615PBF, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for high-efficiency power management in electronic circuits. With a maximum drain-source voltage of 150 V and a continuous drain current of 35A when the case temperature is optimally maintained, this component is suitable for demanding environments. It features a power dissipation capacity of 144W under specified conditions and is housed in a TO-220AB package, making it suitable for through-hole mounting. With a gate threshold voltage of ±20V and a typical on-state voltage of 10V, the IRFB5615PBF effectively controls the flow of electricity in various power applications.
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