IRFB4410N-Channel 100 V 96A (Tc) 250W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRFB44-965781
ManufacturerInfineon Technologies
MPN #.IRFB4410
Estimated Lead Time-
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Datasheet
IRFB4410, IRFS(L)4410(PDF)
IRFB4410, IRFS(L)4410(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C96A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)180 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5150 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 58A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB4410 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high power applications. It features a 100V drain-source voltage rating and can handle a continuous current up to 96A at 25°C case temperature, with a maximum power dissipation of 250W. Encased in a TO-220AB through-hole package, it facilitates efficient thermal management. The MOSFET demonstrates a low on-state resistance of 10 milliohms when conducting at 58A with a gate-source voltage of 10V. It has a gate threshold voltage of 4V at 150µA, making it suitable for a variety of high efficiency power conversion applications.
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