IRFB4310ZGPBFN-Channel 100 V 120A (Tc) 250W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRFB43-985215
ManufacturerInfineon Technologies
MPN #.IRFB4310ZGPBF
Estimated Lead Time-
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Datasheet
IRFB4310ZGPBF(PDF)
IRFB4310ZGPBF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6860 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 75A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB4310ZGPBF is a robust N-Channel MOSFET manufactured by Infineon Technologies, designed for high efficiency in power applications. It features a maximum drain-source voltage of 100 V and a continuous drain current of 120 A when properly heatsinked at the case temperature (Tc). The device demonstrates a power dissipation capacity of 250 W at Tc, indicating its capability to handle substantial power loads. Encased in a TO-220AB through-hole package, this MOSFET ensures efficient thermal management. Its input capacitance is measured at 6860 pF when the device voltage is at 50 V, and it exhibits a total gate charge of 170 nC at a gate-source voltage of 10 V, enabling responsive switching performance. Additionally, it offers a gate-source voltage range of ±20V, providing reliable operation within specified electrical limits.
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