IRFB3507PBFN-Channel 75 V 97A (Tc) 190W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRFB35-1034636
ManufacturerInfineon Technologies
MPN #.IRFB3507PBF
Estimated Lead Time-
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Datasheet
IRFB3507, IRFS(L)3507(PDF)
IRFB3507, IRFS(L)3507(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C97A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3540 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation190W (Tc)
RDS(on) Drain-to-Source On Resistance8.8mOhm @ 58A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 100µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB3507PBF is a power-efficient N-Channel MOSFET developed by Infineon Technologies, designed to handle a continuous current of 97A at a drain-source voltage of 75V, with a power dissipation capacity of 190W. Encased in a TO-220AB through-hole package, this MOSFET features a gate charge of 130 nC at 10 V and a gate threshold voltage of 4V at 100µA. These specifications make it suitable for various applications requiring high current and voltage handling capabilities.
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