IRFB3307ZGPBFN-Channel 75 V 120A (Tc) 230W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRFB33-1031355
ManufacturerInfineon Technologies
MPN #.IRFB3307ZGPBF
Estimated Lead Time-
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Datasheet
IRFB3307ZGPbF(PDF)
IRFB3307ZGPbF(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4750 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance5.8mOhm @ 75A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB3307ZGPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed to handle high power and current applications. It operates with a drain-source voltage of 75V and can manage a continuous drain current of up to 120A under specified conditions. Encased in a TO-220AB package, it features a power dissipation capacity of 230W at a controlled case temperature. The device presents a gate charge of 4750 pF at 50V, with a maximum gate-source voltage of ±20V, making it suitable for scenarios requiring reliable switching performance.
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