IRFB3256PBFN-Channel 60 V 75A (Tc) 300W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRFB32-1024804
ManufacturerInfineon Technologies
MPN #.IRFB3256PBF
Estimated Lead Time-
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Datasheet
IRFB3256PBF(PDF)
IRFB3256PBF(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFB3256
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)195 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6600 pF @ 48 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance3.4mOhm @ 75A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB3256PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency performance in power management applications. It can handle a maximum drain-source voltage of 60 V and a continuous drain current of 75 A when adequately mounted. This MOSFET boasts a substantial power dissipation capacity of 300 W when attached to an appropriate heat sink, thanks to its TO-220AB package which facilitates heat dispersion. Other key specifications include a gate-source voltage rating of ±20 V, a total gate charge of 6600 pF at 48 V, and a gate threshold voltage of 10 V, making it suitable for various power supply and switching tasks without prone to overstress under specified conditions.
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