IRFB3006GPBFN-Channel 60 V 195A (Tc) 375W (Tc) Through Hole TO-220AB
1:$1.6430
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ABRmicro #.ABR2045-IRFB30-938761
ManufacturerInfineon Technologies
MPN #.IRFB3006GPBF
Estimated Lead Time-
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Datasheet
IRFB3006GPbF(PDF)
IRFB3006GPbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.6430
Ext. Price$ 1.6430
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$1.6430$1642.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIRFB3006
Continuous Drain Current (ID) @ 25°C195A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)300 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8970 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance2.5mOhm @ 170A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRFB3006GPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient power handling in various electronic circuits. It can handle a maximum voltage of 60V and support a continuous current of up to 195A under specific conditions, with a power dissipation capacity of 375W. The MOSFET features a low on-resistance of just 2.5 milliohms when carrying a current of 170A at a gate voltage of 10V, ensuring reduced power losses during operation. Housed in a durable TO-220AB through-hole package, it also has an input capacitance of 8970 pF at 50V, catering to high performance in power management applications.
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