IRF9540NLPBFP-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Through Hole TO-262
1:$2.1540
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ABRmicro #.ABR2045-IRF954-998559
ManufacturerInfineon Technologies
MPN #.IRF9540NLPBF
Estimated Lead Time-
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Datasheet
IRF9540NS/L(PDF)
IRF9540NS/L(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.1540
Ext. Price$ 2.1540
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.1540$2.1540
50$1.7320$86.5940
100$1.4250$142.4810
500$1.2060$602.9690
1000$1.0230$1023.1880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIRF9540
Continuous Drain Current (ID) @ 25°C23A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1450 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta), 110W (Tc)
RDS(on) Drain-to-Source On Resistance117mOhm @ 14A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF9540NLPBF is a P-channel MOSFET manufactured by Infineon Technologies, designed for efficient power management and switching applications. The device operates with a maximum voltage of 100V and can handle a continuous current of up to 23A when properly mounted on a heatsink (Tc condition). It features a power dissipation capacity of 3.1W in free air (Ta) and 110W with a heatsink (Tc). The MOSFET demonstrates a drain-source on-state resistance of 117mOhm at a gate-source voltage of 10V and a drain current of 14A, with a gate threshold voltage of 4V at a gate current of 250µA. Housed in a TO-262 package, this component is suitable for through-hole mounting, facilitating secure and efficient integration into electronic circuits.
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