IRF9520NLP-Channel 100 V 6.8A (Tc) 3.8W (Ta), 48W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRF952-997820
ManufacturerInfineon Technologies
MPN #.IRF9520NL
Estimated Lead Time-
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Datasheet
IRF9520NS/L(PDF)
IRF9520NS/L(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C6.8A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)350 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 48W (Tc)
RDS(on) Drain-to-Source On Resistance480mOhm @ 4A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF9520NL is a P-channel MOSFET manufactured by Infineon Technologies, designed to handle voltages up to 100V and a current of 6.8A when appropriately cooled with a thermal connection. It features a power dissipation capacity of 3.8W in open air or 48W when mounted on a suitable heatsink, making it suitable for a variety of power handling requirements. The component is encased in a TO-262 through-hole package, which facilitates mechanical stability and efficient thermal management. The MOSFET's input capacitance is 350 pF at 25V, and it has a gate threshold voltage of 4V at a gate current of 250µA, allowing for controlled switching operations in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.