IRF9335TRPBFP-Channel 30 V 5.4A (Ta) 2.5W (Ta) Surface Mount 8-SO
1:$0.6150
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF933-972170
ManufacturerInfineon Technologies
MPN #.IRF9335TRPBF
Estimated Lead Time12 Weeks
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Datasheet
IRF9335PBF(PDF)
IRF9335PBF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6150
Ext. Price$ 0.6150
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6150$0.6150
10$0.5360$5.3550
100$0.3710$37.0810
500$0.3090$154.5940
1000$0.2640$263.5000
2000$0.2350$469.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF9335
Continuous Drain Current (ID) @ 25°C5.4A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)386 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance59mOhm @ 5.4A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 10µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
Other Related Documents
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF9335TRPBF is a P-Channel MOSFET developed by Infineon Technologies, designed for surface mount applications and housed in an 8-SO package. It operates at a maximum voltage of 30V and can handle a continuous current of 5.4A at ambient temperature conditions, with a power dissipation capacity of 2.5W in the same setting. This MOSFET features a threshold voltage of 2.4V at 10µA and exhibits a low on-resistance of 59mOhm when conducting 5.4A with a gate-source voltage of 10V, making it suitable for efficient switching performance.
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