IRF9204PBFP-Channel 40 V 56A (Ta) 143W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRF920-1012366
ManufacturerInfineon Technologies
MPN #.IRF9204PBF
Estimated Lead Time-
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Datasheet
IRF9204PbF(PDF)
IRF9204PbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRF9204
Continuous Drain Current (ID) @ 25°C56A (Ta)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)224 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7676 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation143W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 37A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 100µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF9204PBF is a P-channel MOSFET manufactured by Infineon Technologies, designed to handle up to 40 volts and a continuous current of 56 amperes at a case temperature, with a power dissipation of 143 watts. Encased in a TO-220AB through-hole package, it features a gate-source threshold voltage of 4.5V to 10V and a gate charge of 224 nC at 10V. The device exhibits an input capacitance of 7676 pF at 25V, making it suitable for high power and switching efficiency requirements.
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