IRF8301MTRPBFN-Channel 30 V 34A (Ta), 192A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
1:$2.2990
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ABRmicro #.ABR2045-IRF830-959846
ManufacturerInfineon Technologies
MPN #.IRF8301MTRPBF
Estimated Lead Time-
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Datasheet
IRF8301MTRPbF(PDF)
IRF8301MTRPbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.2990
Ext. Price$ 2.2990
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Price Gradients
Qty.Unit PriceExt. Price
1$2.2990$2.2990
10$1.9140$19.1360
100$1.5230$152.2560
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIRF8301
Continuous Drain Current (ID) @ 25°C34A (Ta), 192A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)77 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6140 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 89W (Tc)
RDS(on) Drain-to-Source On Resistance1.5mOhm @ 32A, 10V
Package Type (Mfr.)DIRECTFET™ MT
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 150µA
Package / CaseDirectFET™ Isometric MT
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Datasheets
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PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF8301MTRPBF by Infineon Technologies is an N-Channel MOSFET designed for efficient switching applications. It operates at a voltage of 30 V and delivers a current of up to 34A in ambient temperature and 192A with case cooling, sustaining power dissipation of 2.8W in ambient temperature conditions and up to 89W with proper case cooling. This MOSFET features a large input capacitance of 6140 pF at 15 V and a gate charge of 77 nC at 4.5 V, making it suitable for high-frequency applications. It is housed in a surface-mount DIRECTFET™ MT package, facilitating compact and reliable PCB assembly.
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