IRF7855TRPBFN-Channel 60 V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO
1:$1.4960
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF785-1031434
ManufacturerInfineon Technologies
MPN #.IRF7855TRPBF
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
IRF7855PbF(PDF)
IRF7855PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.4960
Ext. Price$ 1.4960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4960$1.4960
10$1.2400$12.3990
100$0.9870$98.7060
500$0.8360$418.0940
1000$0.7100$709.7500
2000$0.6730$1345.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF7855
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)39 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1560 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance9.4mOhm @ 12A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.9V @ 100µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
Other Related Documents
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7855TRPBF is a surface-mount N-channel MOSFET from Infineon Technologies, designed to handle a maximum voltage of 60 V and a continuous current of 12A (Ta). In its 8-pin SO package, it features a power dissipation capacity of 2.5W (Ta). The device exhibits a total gate charge of 39 nC at 10 V and an input capacitance of 1560 pF at 25 V. This MOSFET is suitable for use in electronic circuits where space-saving and efficient voltage and current management are priorities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.