IRF7828TRPBFN-Channel 30 V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-IRF782-995459
ManufacturerInfineon Technologies
MPN #.IRF7828TRPBF
Estimated Lead Time-
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Datasheet
IRF7828PbF(PDF)
IRF7828PbF(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C13.6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1010 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance12.5mOhm @ 10A, 4.5V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7828TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications. This device operates at a maximum voltage of 30 V and can handle a continuous current of 13.6 A at a thermal capacity of 2.5 W in ambient conditions. It features a gate charge of 14 nC at 5 V and has an on-resistance of 12.5 mOhms when conducting 10 A with a gate-source voltage of 4.5 V. The MOSFET is encapsulated in an 8-SO package, making it suitable for compact and efficient circuit designs.
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