IRF7821TRN-Channel 30 V 13.6A (Ta) 2.5W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-IRF782-1032595
ManufacturerInfineon Technologies
MPN #.IRF7821TR
Estimated Lead Time-
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Datasheet
IRF7821(PDF)
IRF7821(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C13.6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1010 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 155°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance9.1mOhm @ 13A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7821TR is a surface mount N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient switching applications. It operates with a maximum drain-source voltage of 30V and can handle continuous currents up to 13.6A at a thermal limit of 2.5W when mounted. The device features a gate-source voltage tolerance of ±20V and an input capacitance of 1010 pF at 15V, making it suitable for managing power in compact electronic circuits. Housed in an 8-SO package, this MOSFET offers a compact and reliable solution for medium power levels within various electrical designs.
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