IRF7805AN-Channel 30 V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-IRF780-1031226
ManufacturerInfineon Technologies
MPN #.IRF7805A
Estimated Lead Time-
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Datasheet
IRF7805(PDF)
IRF7805(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C13A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 5 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance11mOhm @ 7A, 4.5V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7805A is an N-Channel MOSFET manufactured by Infineon Technologies, featuring a 30V voltage rating and a continuous current rating of 13A. It offers a power dissipation of 2.5W when mounted on the surface and housed in a standard 8-SO package. This semiconductor device operates with a gate-source voltage range of ±12V and requires a gate threshold voltage of 4.5V. It utilizes metal-oxide-semiconductor technology to enable efficient switching and amplification tasks in electronic circuits.
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