IRF7707P-Channel 20 V 7A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP
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ABRmicro #.ABR2045-IRF770-929129
ManufacturerInfineon Technologies
MPN #.IRF7707
Estimated Lead Time-
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Datasheet
IRF7707(PDF)
IRF7707(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C7A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2361 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
RDS(on) Drain-to-Source On Resistance22mOhm @ 7A, 4.5V
Package Type (Mfr.)8-TSSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / Case8-TSSOP (0.173", 4.40mm Width)
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7707 by Infineon Technologies is a P-Channel MOSFET designed for surface mount applications, housed in an 8-TSSOP package. It is capable of handling a voltage of up to 20 V and a continuous drain current of 7A. The device dissipates a power of 1.5W in typical conditions. This MOSFET operates efficiently with gate-source thresholds of 2.5V and 4.5V, demonstrating a low on-state resistance with a value of 1.2V at a gate drive current of 250µA. It also supports a gate-source voltage of ±12V, making it suitable for numerous electronic applications requiring precise control and switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.