IRF7580MTRPBFN-Channel 60 V 114A (Tc) 115W (Tc) Surface Mount DirectFET™ Isometric ME
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ABRmicro #.ABR2045-IRF758-1008526
ManufacturerInfineon Technologies
MPN #.IRF7580MTRPBF
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Datasheet
IRF7580MTRPbF(PDF)
IRF7580MTRPbF(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesStrongIRFET™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRF7580
Continuous Drain Current (ID) @ 25°C114A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)180 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6510 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation115W (Tc)
RDS(on) Drain-to-Source On Resistance3.6mOhm @ 70A, 10V
Package Type (Mfr.)DirectFET™ Isometric ME
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.7V @ 150µA
Package / CaseDirectFET™ Isometric ME
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7580MTRPBF is an N-channel MOSFET manufactured by Infineon Technologies. It is designed to handle up to 60 volts and a continuous current of 114 amperes when adequately heat-sunk (Tc). The device can dissipate up to 115 watts under specified conditions. Its compact surface-mount packaging utilizes the DirectFET™ Isometric ME design, which provides enhanced thermal performance and efficiency. This MOSFET features a gate-to-source voltage (Vgs) tolerance of ±20 volts and has an input capacitance of 6510 pF when measured at 25 volts.
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