IRF7493TRPBFN-Channel 80 V 9.3A (Tc) 2.5W (Tc) Surface Mount 8-SO
1:$1.3940
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF749-1021412
ManufacturerInfineon Technologies
MPN #.IRF7493TRPBF
Estimated Lead Time12 Weeks
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Datasheet
IRF7493PbF(PDF)
IRF7493PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3940
Ext. Price$ 1.3940
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3940$1.3940
10$1.1380$11.3790
100$0.8850$88.5060
500$0.7500$375.0630
1000$0.6110$610.9380
2000$0.5760$1151.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF7493
Continuous Drain Current (ID) @ 25°C9.3A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)53 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1510 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 5.6A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
Other Related Documents
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7493TRPBF by Infineon Technologies is a surface-mount N-Channel MOSFET designed to handle a maximum voltage of 80V and a continuous current of 9.3A at case temperature. This component, housed in an 8-SO package, offers a maximum power dissipation of 2.5W at case temperature. It exhibits low on-state resistance, measuring 15 milliohms at 5.6A and 10V. The MOSFET's gate charge is specified at 53 nC when driven at a gate-to-source voltage of 10V, facilitating efficient switching performance in electronic circuits.
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