IRF7452TRPBFN-Channel 100 V 4.5A (Ta) 2.5W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-IRF745-920704
ManufacturerInfineon Technologies
MPN #.IRF7452TRPBF
Estimated Lead Time-
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Datasheet
IRF7452(PDF)
IRF7452(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C4.5A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)930 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance60mOhm @ 2.7A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7452TRPBF by Infineon Technologies is a surface-mount N-Channel MOSFET designed for moderate power applications. It features a maximum drain-source voltage of 100 V and can handle a continuous drain current of up to 4.5A under specific conditions, with a power dissipation capacity of 2.5W. The device is housed in a compact 8-SO package. Its gate charge is measured at 930 pF when tested at 25 V. It requires a gate-to-source voltage of 5.5V to achieve a drain-source current of 250µA, and it exhibits an on-resistance of 60mOhm at a drain current of 2.7A and a gate voltage of 10V.
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