IRF7424GTRPBFP-Channel 30 V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-IRF742-1015987
ManufacturerInfineon Technologies
MPN #.IRF7424GTRPBF
Estimated Lead Time-
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Datasheet
IRF7424GPBF(PDF)
IRF7424GPBF(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C11A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4030 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance13.5mOhm @ 11A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7424GTRPBF is a P-channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in an 8-SO package. It features a voltage rating of 30V and can handle a continuous current up to 11A at a specified ambient temperature (Ta). The device has a power dissipation capability of 2.5W under similar conditions. It exhibits a gate-to-source voltage (Vgs) threshold of ±20V and has a capacitance of 4030 pF when tested at 25V. The MOSFET supports operation at gate voltages of 4.5V and 10V, making it suitable for low-voltage switching tasks where efficient power management is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.