IRF7416TRPBFP-Channel 30 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO
1:$0.8290
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ABRmicro #.ABR2045-IRF741-999116
ManufacturerInfineon Technologies
MPN #.IRF7416TRPBF
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet
IRF7416PbF(PDF)
IRF7416PbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8290
Ext. Price$ 0.8290
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8290$0.8290
10$0.6770$6.7680
100$0.5260$52.5940
500$0.4460$223.1250
1000$0.3630$363.3750
2000$0.3420$684.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRF7416
Continuous Drain Current (ID) @ 25°C10A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)92 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance20mOhm @ 5.6A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
Other Related Documents
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7416TRPBF is a P-Channel MOSFET manufactured by Infineon Technologies, designed for efficient voltage control in electronic circuits. It operates with a maximum voltage of 30 V and supports a current of up to 10A when the device is set in specific conditions, with a power dissipation capacity of 2.5W. This surface-mount component is encapsulated in an 8-SO package, enhancing its suitability for compact electronic assemblies. Characterized by a low on-resistance of 20 milliohms at 5.6A with a gate-to-source voltage of 10V, it ensures minimal power losses. Additionally, it has a total gate charge of 92 nC at 10V, indicating its response efficiency in switching applications.
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