IRF7324D1TRP-Channel 20 V 2.2A (Ta) 2W (Ta) Surface Mount 8-SO
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRF732-1022552
ManufacturerInfineon Technologies
MPN #.IRF7324D1TR
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IRF7324D1(PDF)
IRF7324D1(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesFETKY™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C2.2A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.7V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)7.8 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)260 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2W (Ta)
RDS(on) Drain-to-Source On Resistance270mOhm @ 1.2A, 4.5V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)700mV @ 250µA (Min)
Package / Case8-SOIC (0.154", 3.90mm Width)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Other Related Documents
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7324D1TR by Infineon Technologies is a P-Channel MOSFET designed for surface mount applications with an 8-SO package. It features a maximum drain-source voltage of 20 V and can handle a continuous drain current of 2.2A under specified conditions. The device supports gate-source voltages of 2.7V and 4.5V and has a gate threshold voltage of 700mV at a minimum drain current of 250µA. Additionally, it has an input capacitance of 260 pF when measured at 15 V, providing efficient electrical performance for various electronic setups.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.