IRF7241TRP-Channel 40 V 6.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-IRF724-939882
ManufacturerInfineon Technologies
MPN #.IRF7241TR
Estimated Lead Time-
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Datasheet
IRF7241(PDF)
IRF7241(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C6.2A (Ta)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3220 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance41mOhm @ 6.2A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRF7241TR is a P-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with an 8-SO package. It operates with a maximum drain-source voltage of 40 volts and a continuous drain current of up to 6.2 amperes at TA. The component features a low on-state resistance of 41 milliohms at 6.2A with a gate-source voltage of 10 volts, supporting efficient power management. It also accommodates gate-source voltages ranging from ±20 volts and is designed for use at gate voltages of 4.5 volts and 10 volts, capable of dissipating up to 2.5 watts of power.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.